| 摘要 |
PURPOSE:To permit fast growth of a high-quality single crystal film at a low temp. by projecting X-rays under specific conditions to a substrate surface at the time of growing the single crystal film matched with the single crystal of the substrate surface by film deposition by vacuum deposition, sputtering or CVD on the surface of the substrate, the surface of which is the single crystal. CONSTITUTION:The material of the same kind as the single crystal on the surface of the substrate having the single crystal layer on the surface or the material different therefrom is deposited by vacuum deposition, sputtering or CVD on the surface of an above-mentioned substrate to grow the single crystal film of the above-mentioned material on the above-mentioned surface. The X-rays are projected onto said surface in a manner as to satisfy Bragg's reflection conditions with respect to one or plural crystal orientation of the single crystal layer of the above-mentioned substrate surface. The above-mentioned material is deposited on the substrate surface in the environment where the X-ray standing waves having the periodicity of the crystal lattice of the above-mentioned single crystal layer are made to exist on the substrate surface. The film of the single crystal of the above-mentioned material matching with the single crystal layer of the substrate surface is thus grown.
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