| 摘要 |
PURPOSE:To prevent a short circuit due to a contact between a polycrystalline silicon layer and an adjacent electrode and the abnormality of the patterning of an electrode by the stepped section of the polycrystalline silicon layer, and to realize a semiconductor device having higher density and operating at higher speed by burying the polycrystalline silicon layer on the inside of a window bored to an insulating film. CONSTITUTION:A first insulating film 3 to which a window A for connection is bored is formed onto a semiconductor 2 layer, a polycrystalline semiconductor layer 4 coating the window A and a second insulating film 5 are shaped in succession, and a photo- resist film 6 is formed onto the insulating film 5 so that the surface is flattened. The photo-resist film 6 is removed selectively, leaving a section on the window A, and the second insulating film 5 is removed using the photo-resist film 6 as a mask. The polycrystalline semiconductor layer 4 is taken off, employing the photo-resist film 6 and the second insulating film 5 as masks, and the polycrystalline semiconductor layer 4 is shaped at an attitude burying the window A. A layer containing arsenic is used as the polycrystalline silicon layer 4, the photo-resist film 6 is removed, arsenic in the polycrystalline silicon layer 4 is diffused onto the surface of the diffusion layer 2 through heat treatment, and a diffusion layer 7 for an emitter is shaped.
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