| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of forming a SiC epitaxial film uniformly on a plurality of substrates, and to provide a method of manufacturing the substrates. SOLUTION: The substrate processing apparatus includes: a reaction chamber 44 for processing a stacked substrate 14; a first gas supply system 210a to 213b, 222, 60, 68; a second gas supply system 210d to 213d, 260, 70, 72; a third gas supply system 210c to 213c; first and second gas supply nozzles 60, 70 which are extended in the stacking direction of the substrates and have first and second gas supply openings 68, 72, respectively, in the stacked region of the substrates; and a controller for controlling the apparatus so as to supply at least a Si containing gas and a Cl containing gas from the first supply openings to the reaction chamber, to supply at least a reduction gas from the second gas supply openings to the reaction chamber, to make the third gas supply system supply a C containing gas to the reaction chamber through the first gas supply openings or the second gas supply openings, to form a silicon carbide film. The method of manufacturing the substrates using the apparatus is also disclosed. COPYRIGHT: (C)2011,JPO&INPIT |
