发明名称 FILM FORMING METHOD OF SILICON THIN-FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for obtaining a silicon thin film having a structure wherein a contact layer of high conductivity and an intrinsic silicon layer are laminated by a simpler method to which a coating method is applied. SOLUTION: A coating liquid wherein a chain higher order silane compound B, a compound containing a metal M and a solvent C are mixed is prepared, wherein the solvent C includes a compound having a lower boiling point than the higher order silane compound B and interacting with the metal M. A coating film 3 is formed on a substrate 1 by using the coating liquid. The solvent C is removed from the coating film 3 to dry. At this time, the coating film 3 is heated. Thereby the silicon thin film 5 with a large content of the metal M is formed on the surface side. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011029421(A) 申请公布日期 2011.02.10
申请号 JP20090173898 申请日期 2009.07.27
申请人 SONY CORP 发明人 KAINO YURIKO;AKASAKA SHIN;AKAMATSU KEIICHI;KAMEI TAKAHIRO
分类号 H01L21/208;H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/208
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