发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of easily adjusting individual heights of a magnet mechanism having a plurality of magnets with different polarities and capable of improving the film thickness non-uniformity in forming a thin film. SOLUTION: The plasma processing apparatus is provided with a processing chamber 100 which can be evacuated, and a first electrode (a high frequency electrode) arranged inside the processing chamber. It is further provided with a plurality of magnets 14 arranged on the first electrode 10 with polarities being arranged reversely between the adjacent magnets, and a second electrode (a substrate loading electrode) 20 arranged to face the first electrode 10. The plasma processing apparatus is also provided with a distance adjusting mechanism for individually adjusting the distance between the plurality of magnets 14 and the first electrode 10. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011026624(A) 申请公布日期 2011.02.10
申请号 JP20070264510 申请日期 2007.10.10
申请人 CANON ANELVA CORP 发明人 WATANABE EISAKU;IKEDA MASAYOSHI;SHIBUYA YOSUKE
分类号 C23C14/35 主分类号 C23C14/35
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