发明名称 Semiconductor device
摘要 The semiconductor device includes a first pair of data lines, a second pair of data lines, a third pair of data lines, a first amplifier (SA) connected to the first pair of data lines, a first switch that controls connection between the first pair of data lines and the second pair of data lines, a second switch that controls connection between the second pair of data lines and the third pair of data lines, a second amplifier that amplifies data on the second pair of data lines, for output to the third pair of data lines, a third amplifier connected to the third pair of data lines, and a control circuit that controls the second switch forming a pair of switches. When two data lines constituting the third pair of data lines both assume a first state, the control circuit controls the second switch to be turned off, thereby controlling the second pair of data lines and the third pair of data lines to be disconnected. Output data of the first amplifier is then output to the second pair of data lines via the first switch. When the two data lines constituting the third pair of data lines assume a second state different from the first state according to data output from the third amplifier, the second switch is controlled to be turned on, thereby controlling the second pair of data lines and the third pair of data lines to be connected. Then, the first amplifier receives the data output from the first amplifier.
申请公布号 US2011032780(A1) 申请公布日期 2011.02.10
申请号 US20100805510 申请日期 2010.08.03
申请人 ELPIDA MEMORY, INC. 发明人 TERAMOTO KAZUHIRO;KODAMA TAKUYO
分类号 G11C7/10;G11C7/06 主分类号 G11C7/10
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