发明名称 COMPLIMENTARY METAL-INSULATOR-METAL (MIM) CAPACITORS AND METHOD OF MANUFACTURE
摘要 A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.
申请公布号 US2011032659(A1) 申请公布日期 2011.02.10
申请号 US20090535769 申请日期 2009.08.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DUNN JAMES S.;HE ZHONG-XIANG;STAMPER ANTHONY K.
分类号 H01G4/38;B05D5/12;C23F1/00;H01G4/06 主分类号 H01G4/38
代理机构 代理人
主权项
地址