发明名称 |
COMPLIMENTARY METAL-INSULATOR-METAL (MIM) CAPACITORS AND METHOD OF MANUFACTURE |
摘要 |
A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.
|
申请公布号 |
US2011032659(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20090535769 |
申请日期 |
2009.08.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUNN JAMES S.;HE ZHONG-XIANG;STAMPER ANTHONY K. |
分类号 |
H01G4/38;B05D5/12;C23F1/00;H01G4/06 |
主分类号 |
H01G4/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|