发明名称 |
VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF PROGRAMMING VARIABLE RESISTANCE MEMORY DEVICES |
摘要 |
A variable resistance memory device includes a variable resistance memory cell, and a by-pass circuit configured to electrically by-pass a programming pulse supplied to the variable resistance memory cell after a resistive state of the variable resistance memory cell has changed in response to the programming pulse.
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申请公布号 |
US2011032747(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20100851681 |
申请日期 |
2010.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON HONG-SIK;PARK MIN-YOUNG;BAEK IN-GYU;SIM HYUN-JUN;ZHAO JIN-SHI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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