FORMATION OF THIN FILM

摘要

PURPOSE:To form sharp substrate-film interface and to reduce unevenness of the characteristics of devices by applying a magnetic field to plasma to cause electron cyclotron resonance in the plasma, introducing the plasma into a film forming chamber and bringing it into contact with gaseous starting materials to form a thin film. CONSTITUTION:A vacuum vessel is divided into a film forming chamber 1 and a plasma generating chamber 4. A plasma generating gas is introduced into the chamber 4 and microwave power is impressed to generate plasma. A magnetic field is applied to the plasma to cause electron cyclotron resonance in the plasma and this plasma is introduced into the chamber 1 and brought into contact with gaseous starting materials introduced into the chamber 1. A thin film is formed on a substrate 2 under conditions so controlled that negative DC voltage generated in the substrate 2 kicks off at >=0.1V/sec velocity.