发明名称 SINGLE CRYSTAL FOR SCINTILLATOR, METHOD OF HEAT TREATMENT FOR MANUFACTURING SINGLE CRYSTAL FOR SCINTILLATOR, AND METHOD OF MANUFACTURING SINGLE CRYSTAL FOR SCINTILLATOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a single crystal for scintillator capable of sufficiently reducing the difference of fluorescent output on the low concentration side and high concentration side of cerium, a method of heat treatment for manufacturing the same and a method of manufacturing the same. <P>SOLUTION: This single crystal for scintillator is represented by general formula (1): Gd<SB>2-(a+x+y+z)</SB>Ln<SB>a</SB>Lu<SB>x</SB>Ce<SB>y</SB>Lm<SB>z</SB>SiO<SB>5</SB>and contains cerium-activated ortho silicate compound (wherein Lm represents at least an element selected from the group consisting of Pr, Tb and Tm; Ln represents at least an element selected from lanthanoid elements except Pr, Tb and Tm, and Sc and Y; a represents a value not smaller than 0 and less than 1; x represents a value greater than 1 and less than 2; y represents a value greater than 0 and not greater than 0.01; and z represents a value greater than 0 and not greater than 0.01, and a+x+y+z has a value of not greater than 2). <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011026547(A) 申请公布日期 2011.02.10
申请号 JP20100103956 申请日期 2010.04.28
申请人 HITACHI CHEM CO LTD 发明人 KURATA YASUSHI;USUI TATSUYA;SHIMURA NAOAKI
分类号 C09K11/79;C09K11/00;C30B15/04;C30B29/34;C30B33/02;G01T1/161 主分类号 C09K11/79
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