| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a SIMOX wafer having a BOX layer locally formed thereon, the method holding surface flatness excellent with good reproducibility through simple steps. SOLUTION: The method for manufacturing the SIMOX wafer includes: a step of forming a mask layer on one surface side of the wafer, which has an opening on a region where a BOX layer is to be formed; a step of implanting oxygen ions through the opening of the mask layer into the silicon single crystal wafer to a predetermined depth, and locally forming an oxygen implantation region; an annealing step of annealing the wafer with the mask layer, and oxidizing the oxygen implantation region so as to form the BOX layer; and an oxide film removing step of removing a coated oxide film that covers the whole wafer which is formed in the annealing process, wherein the mask layer has a lamination comprising at least an oxide film and either one or both of a polysilicon film and an amorphous silicon film. COPYRIGHT: (C)2011,JPO&INPIT
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