| 发明名称 |
METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method for forming capacitor of a semiconductor device is provided to prevent the conductive film for a storage node in forming capping oxide by forming the storage node by etching a nitride film. CONSTITUTION: An insulating layer(106) including a plurality of holes(H) on the semiconductor substrate(100) is formed. A conductive film(114) is formed on the insulating layer including the surface of the hole. The conductive film is processed by plasma nitride to form a nitride film(116) on the surface of the conductive film. The nitride film and conduction film are removed from the insulating layer. The storage node is formed on the surface of the hole.
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| 申请公布号 |
KR20110012460(A) |
申请公布日期 |
2011.02.09 |
| 申请号 |
KR20090070186 |
申请日期 |
2009.07.30 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, DONG KYUN;PARK, CHEOL HWAN;CHO, HO JIN |
| 分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
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