METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to completely remove an oxide film without the loss of an element isolation film by removing an oxide film more than SIOF film remaining on the surface of a substrate. CONSTITUTION: A gate insulating layer(120) is formed on the surface of gate grooves and a semiconductor substrate(100). A gate conductive film(122) is formed on the gate insulating layer to fill the gate grooves. A gate hard mask layer(124) is formed on the gate conductive film. Gates(126) are formed at the gate grooves by etching the gate hard mask layer, the gate conductive film, and the gate insulating layer are etched.