Semiconductor device and power converter using the same

摘要

An area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided and in the area of a wide interval, a p-type well layer deeper than a p-type base layer is provided. By use of this constitution, even if an area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided, the withstand voltage will not be lowered.