发明名称 WIDE BAND POWER AMPLIFIER OF PUSH-PULL STRUCTURE
摘要 PURPOSE: A broadband power amplifier having a push-pull structure optimizes power matching at a baseband and high band by forming a capacitance tuning structure within a chip. CONSTITUTION: A power amplification part(110) amplifies the power of an input signal by using a push-pull structure. An inductor circuit part(130) is connected to a line between the output terminal of the power amplification part and the final output terminal. An output capacitor circuit part(140) is connected between the final output terminal and the ground. A variable capacity circuit part(150) is connected between the final output terminal and the ground. A variable capacity circuit part has a variable capacitance for power matching at a baseband and high band. A power amplification part and variable capacity circuit part are formed within one chip.
申请公布号 KR20110012392(A) 申请公布日期 2011.02.09
申请号 KR20090070100 申请日期 2009.07.30
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 MIN, JUN KI;EO, YUN SEONG;KIM, KI HONG;HWANG, SUNG HO
分类号 H03F3/30 主分类号 H03F3/30
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