METHOD FOR FORMING NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device forming method is provided to obtain the stabilization of a process by minimizing the generation of LER by implementing the repetition of in-situ photoresist sliming and etching in the etching chamber. CONSTITUTION: A stack including a conductive film and an insulating layer is deposited repetitively on a substrate. A photosensitive pattern is formed on the deposited stack. The top most stack is etched using the photosensitive pattern as the etching barrier wall. The break through etching is implemented. The photosensitive pattern is slimmed.