| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve the operational property of the semiconductor device by preventing a photosensitive film pattern from being collapsed in a fine pattern forming process. CONSTITUTION: A mask film(304) is formed on the upper side of a target layer(302). Grooves corresponding to patterns are formed on the mask film. A hard mask layer(306) is formed on the mask film with the grooves. A photosensitive film is formed on the hard mask layer. A photosensitive pattern is formed on the upper side of the grooves. The mask film is etched based on the photosensitive pattern. The target layer which is exposed by the mask film is etched to form the patterns.</p> |
