PHOTORESIST COMPOSITION FOR FORMING SELF-ALIGNED DOUBLE PATTERN

摘要

PURPOSE: A photoresist composition for forming a self-aligned double pattern and a self-aligned double patterning method using the same are provided to prevent alignment issue. CONSTITUTION: A photoresist composition for forming self-aligned double pattern contains 0.5-1.5 weight% of polymer of chemical formula 1 and remaining amount of solvent. The composition causes the thickness reduction of photoresist film and pattern of non-exposed part during self-aligned double patterning process.