| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wafer dividing method which irradiates pulse laser rays along a line of wafer to be divided to form an affected layer, divides the wafer along the line to-be-divided where the affected layer is formed, and can easily divide the wafer without decreasing an anti-breakage strength. <P>SOLUTION: The wafer dividing method divides the wafer where devices are formed in an area sectioned by the lattice-like line to-be-divided. The method includes an inside affected layer forming process which irradiates the pulse laser rays having permeability on the middle of the wafer in the direction of thickness of the wafer, and forms the inside affected layer on the middle of in the direction of thickness of the wafer; an exposed affected layer forming process which intermittently irradiates the pulse laser rays on near at least one surface of the wafer along the line to-be-divided, and forms the exposed affected layer intermittently exposed on at least one surface of the wafer; and a dividing process which applies an external force on the wafer on which the inside affected layer and exposed affected layer are formed, and divides the wafer with the exposed affected layer as a division starting point along the inside affected layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
