| 摘要 |
PROBLEM TO BE SOLVED: To reduce wiring resistance by improving a method for contacting to a source/drain region, in a thin-film transistor. SOLUTION: This semiconductor device includes: a crystalline silicon film having first and second silicides on a silicon oxide film, a channel formation region, a source region and a drain region; a gate insulating film on the channel formation region; a gate electrode on the gate insulating film; a sidewall formed on a side face of the gate electrode; a first metal wire formed in contact with the first silicide; and a second metal wire formed in contact with the second silicide. The semiconductor device is structured such that the first silicide is formed at a part of the upper surface of the source region and on a side face thereof; the second silicide is formed at a part of the upper surface of the drain region and a side face thereof; and the first metal wire and the second metal wire are formed by etching the same metal film. The first and second silicides are formed using a metal used for the metal film. COPYRIGHT: (C)2010,JPO&INPIT |
