| 摘要 |
PURPOSE: A non-volatile semiconductor memory circuit and a controlling method thereof are provided to stabilize data verification by verifying data with a sensing reference voltage in consideration of resistance drift. CONSTITUTION: A control signal generating part(100) supplies a control signal in response to a read/write command. A sensing block(200) reads the data of a memory cell array respectively according to the level of a control signal. A sensing reference voltage supply unit supplies non-active signal in reading operation. A write driver(300) applies a write pulse corresponding to input data in response to the write command. A sense amp receives first and second sensing reference voltage to sense corresponding cell data.
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