| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to improve the property of a semiconductor device by easily forming a contact hole of 40nm through double space patterning to reduce contact resistance. CONSTITUTION: A first hard mask layer(102) is formed on a semiconductor substrate(100). A first space pattern(108) is formed on the hard mask layer. An insulating layer(110a) is formed on the first space pattern. A micro-pattern which is defined by the second space pattern is formed on the insulating layer. A contact hole is formed by etching the first hard mask layer using the micro-pattern and the first space pattern as an etching mask.</p> |
