METHOD MANUFACTURING FLEXIBLE OXIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a flexible oxide semiconductor device is provided to improve the electrical property of the device by implementing a thermal process at high temperature without the deformation of a substrate. CONSTITUTION: A sacrificial layer is formed on a substrate(S110). A buffer layer is formed on the sacrificial layer(S120). An oxide semiconductor device is formed on the buffer layer(S130). A crack preventive protection layer is formed on the oxide semiconductor device(S140). The oxide semiconductor device is thermally processed at high temperature(S150). The sacrificial layer is eliminated to separate the oxide semiconductor device from the substrate(S160). The separated oxide semiconductor device is transferred to a flexible substrate(S170).