| 摘要 |
PURPOSE: A semiconductor memory circuit for generating a reference voltage is provided to supply a stable reference voltage by sensing the variation of a first internal reference voltage. CONSTITUTION: A first voltage divider(110) supplies the first internal voltage of a target level by using a test mode signal. A second voltage divider(130) supplies the second internal voltage of a target level. A comparator compares first with second internal reference voltage. A counter(150) supplies a test mode signal the comparison result of the comparator. The counter includes a binary counter. |
