| 摘要 |
PURPOSE: The redundancy circuit of a semiconductor memory device is provided to improve the efficiency of a fuse by cutting a fuse related to a failure generated mat. CONSTITUTION: An enable signal generating part(100) includes a plurality of enable fuses. In the enable signal generating part, one or more fuses among the enable fuses are cut. A mat grouping information signal is inputted to the enable signal generating part in order to enable an enable signal. A fail setting address controlling part(500) generates a fail setting address according to whether a fuse is cut. A comparing part(400) compares the fail setting address and a real address and generates a redundancy address.
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