LARGE-SIZE SILICON CARBIDE GROWTH BY TWO HEATERS

摘要

PURPOSE: A large diameter silicon carbide single crystal growing apparatus using two heating elements is provided to stably grow the SiC single crystal of large diameter being larger than 3 inch by controlling efficiently the temperature difference of initial and ending periods on the bottom of the crucible. CONSTITUTION: When growing the large diameter silicon carbide single crystal using the sublimation method, the crucible(5) is heated using individual heating bodies on the top and the bottom. The heating method comprises the induction heating and the resistance heating. The individual heating body differently controls the temperature of the top crucible and the bottom crucible.