| 发明名称 |
NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS |
| 摘要 |
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs. |
| 申请公布号 |
EP1697965(A4) |
申请公布日期 |
2011.02.09 |
| 申请号 |
EP20030790447 |
申请日期 |
2003.12.11 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
CRAVEN, MICHAEL, D.;DENBAARS, STEVEN, P. |
| 分类号 |
H01L21/20;C30B25/02;C30B25/04;C30B25/10;C30B25/18;C30B29/40;C30B29/60;H01L21/00;H01L21/205;H01L29/15;H01L29/20;H01L33/00 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
