| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to increase the internal area of a storage node hole without increasing the depth of the storage node hole by forming a second sacrificial insulating layer by depositing first and second insulating layers having different dry etching speeds. CONSTITUTION: A first sacrificial dielectric film(35) is formed on a semiconductor substrate(31). A second sacrificial dielectric film(36) is formed by depositing a first insulating layer(36A) and a second insulating layer(36B) on the first sacrificial insulating layer. A supporting layer(44) and a protective layer(45) are successively formed on the second sacrificial insulating layer.
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