| 摘要 |
PURPOSE: A method for fabricating of a wafer and a semiconductor device using the wafer and a method of manufacturing the same are provided to increase storage capacity by forming the upper part of a conductive pattern of a stepped shape to remove the area in which conductive patterns are overlapped. CONSTITUTION: A wafer(130) is attached to the polishing head while being tiled to one side. The wafer are polished to have an inclination from the edge to center. The center of the wafer is relatively thicker than the edge. A plurality of conductive patterns are formed on the top of the wafer. The conductive pattern comprises at least one among a gate, a contact plug, a bit line, a capacitor, and a metal wiring.
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