| 摘要 |
PURPOSE: A semiconductor apparatus and a fabrication method thereof are provided to prevent a buried gate and a contact from being electrically connected with each other by removing conductive material remaining on the sidewall of a recess through one time washing process. CONSTITUTION: An element isolation film(204) defining an active area is formed on a semiconductor substrate(202). A first insulating layer(206) is formed on the active area and the element isolation film. A recess is formed in a semiconductor substrate. A barrier metal(210) is formed over the top side of the semiconductor substrate. A buried gate(214) is formed in the lower part of the recess. A second insulating layer(216) is formed on the buried gate.
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