发明名称 THROUGH SILICON VIA TYPE SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor integrated circuit of through silicon via method is provided to improve the signal transmission speed by rapidly shift the transmission signal to a target level. CONSTITUTION: A master chip(110) and a slave chip(120) are deposited. The master chip comprises a transmission unit(111), a receiver(112), and a termination(113). The slave chip comprises a transmission unit(121) and a receiver unit. The transmission unit and the receiver unit are embodied with the same circuit configuration.
申请公布号 KR20110012405(A) 申请公布日期 2011.02.09
申请号 KR20090070117 申请日期 2009.07.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KU, YOUNG JUN;LEE, JONG CHERN
分类号 H01L23/12;H01L21/28 主分类号 H01L23/12
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