| 摘要 |
PURPOSE: A semiconductor device storage capacitor is provided to relieve the constraints of a design rule during the formation thereof by separating the bottom electrode of the storage capacitor into two terminals. CONSTITUTION: Metal electrodes(100a, 100b) are formed on the top of a semiconductor substrate in a line shape. An inter-layer insulating film is formed on the top of a metal electrode. A plurality of storage electrodes(C) is connected to the metal electrode by passing through the inter-layer insulating film.
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