| 摘要 |
PURPOSE: A semiconductor device and a method for forming the same are provided to prevent the increase of bit-line contact resistance by forming an insulating space on the contact sidewall of a bit-line through an ion-implantation process. CONSTITUTION: A buried gate(106) is buried in a semiconductor substrate(100) including an active area(104). A capping nitride film is formed on the buried gate. A bit-line includes an epitaxial growth layer(114), a conductive film(116), a stacked structure of an hard mask layer(120) and a bit-line electrode. An insulating spacer(130) is arranged at the sidewall of the conductive film and the lower sidewall of the bit-line electrode. A storage node contact(132) is arranged on both sidewalls of a bit-line.
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