SEMICONDUCTOR DEVICE WITH OVERLAPED STACK CAPACITOR

摘要

The semiconductor device with overlapped stack capacitor for enlarging capacitance of capacitors and improving an integrating degree comprises a first storage capacitor (46) connected to a source region (54) of a first transistor and extended to an upper part of a field oxide film (52), a first dielectric film (66) formed on the first storage capacitor,a first plate poly layer (68) formed on the first dielectric film, a second storage capacitor (50) connected to a source region (54) of a second transistor and overlapped with the first plate poly layer on the upper part of the field oxide film (52), a second dielectric film (72) formed on the second storage capacitor and a second plate poly layer (74) formed on the second dielectric film.