| 摘要 |
<p>PURPOSE: A semiconductor device manufacturing method is provided to improve the refresh property of a device by reducing the GIDL(Gate Induced Drain Leakage) current by forming a thick capping layer on a portion where a bonding area and a gate are overlapped. CONSTITUTION: A first groove is formed by etching a semiconductor substrate(100). A second groove of a ball shape is formed by isotropically etching a portion of a semiconductor substrate on the bottom of the first groove. A nitride film is formed inside the second groove of the ball shape. A third groove(H3) is formed by etching a portion of a semiconductor on the bottom of the second groove.</p> |
