RESERVOIR CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A reservoir capacitor of a semiconductor device and a method for forming the same are provided to improve the yield of the semiconductor device by widening a gap between contact patterns. CONSTITUTION: A first contact(502) and a third contact(512) are formed on the upper side of the cell region and the peripheral region of a semiconductor substrate. A second contact(504) and a fourth contact(514) are formed on the first contact and the third contact. The lower electrode(506) of a capacitor is formed to identically maintain a gap between neighboring patterns on the second contact and the fourth contact.