| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to easily remove an oxidized reaction film from the surface of a poly-silicon film in post wet-cleaning process by performing thermal process in O2 gas atmosphere to oxidize the reaction film on the surface of the poly-silicon film. CONSTITUTION: A conductive film is formed on a semiconductor substrate. The outcome of the semiconductor substrate in which the conductive film is formed is thermal-processed. The thermal process includes a first thermal process under a first temperature and a second thermal process under a second temperature lower than the first temperature. A conductive film comprises a poly-silicon layer with doped impurity. The first thermal process is performed under the first temperature of 800-1100°C. The second thermal process is preformed under the second temperature of 200~600°C.
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