| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to minimize of the volume variation of copper in forming a metal wire by performing annealing of a copper film twice. CONSTITUTION: An interlayer insulating film(102) having a wiring region in the upper part of a semiconductor substrate(100) is formed. A copper layer is formed on the interlayer insulating film including the wiring region. First annealing of the semiconductor substrate in which the copper layer is formed is performed. CMP of the copper layer which is annealed in first is performed. Second annealing of the copper layer in which CMP is performed in second is performed. A barrier insulating layer(106) is formed on the copper layer(104c) and the interlayer insulating film in which the second annealing is performed.
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