发明名称 Thin film deposition
摘要 A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers can include both an insulative layer of one or more insulative films, and a conductive metal layer of one or more conductive metal layer films. In another aspect, a bias signal of positive and negative voltage pulses may be applied to a target of a deposition chamber to facilitate deposition of the target material in a suitable fashion. In yet another aspect, one or more of the deposition chambers may have associated therewith a pump which combines a turbomolecular pump and a cryogenic pump to generate an ultra high vacuum in that chamber. Other features are described and claimed.
申请公布号 US7884032(B2) 申请公布日期 2011.02.08
申请号 US20050260899 申请日期 2005.10.28
申请人 APPLIED MATERIALS, INC. 发明人 YE MENGQI;DING PEIJUN;WANG HOUGONG;LIU ZHENDONG
分类号 H01L21/469 主分类号 H01L21/469
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