发明名称 |
Methods for fabricating image sensor devices |
摘要 |
Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.
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申请公布号 |
US7883926(B2) |
申请公布日期 |
2011.02.08 |
申请号 |
US20100710441 |
申请日期 |
2010.02.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SHIAU GWO-YUH;LIU MING-CHYI;HSIEH YUAN-CHIH;FU SHIH-CHI;TSAI CHIA-SHIUNG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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