| 摘要 |
PURPOSE: A chemical vapor deposition device and a substrate processing device are provided to uniformly form the thickness of a thin film by easily controlling the flatness of a susceptor. CONSTITUTION: A chamber forms a processing space in order to form a thin film on a substrate. A susceptor(130) is arranged inside the chamber and supports the substrate in the processing space. A shower head(170) is arranged inside the chamber and sprays processing gas to the substrate. An elastomer(150) elastically supports the susceptor inside the chamber. A support plate is separated from the bottom side of the chamber and supports the elastomer.
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