| 摘要 |
The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.
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