发明名称 |
Nonvolatile semiconductor memory device and method for driving same |
摘要 |
A nonvolatile semiconductor memory device includes: a semiconductor substrate including a first channel, and a source region and a drain region provided on both sides of the first channel; a first insulating film provided on the first channel; a charge retention layer provided on the first insulating film; a second insulating film provided on the charge retention layer; and a semiconductor layer including a second channel provided on the second insulating film, and a source region and a drain region provided on both sides of the second channel.
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申请公布号 |
US7885106(B2) |
申请公布日期 |
2011.02.08 |
申请号 |
US20090411746 |
申请日期 |
2009.03.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJIKI JUN;MURAOKA KOICHI;YASUDA NAOKI |
分类号 |
G11C16/04;G11C5/14;G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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