发明名称 Semiconductor processing methods
摘要 The invention includes methods of forming electrically conductive material between line constructions associated with a peripheral region or a pitch region of a semiconductor substrate. The electrically conductive material can be incorporated into an electrically-grounded shield, and/or can be configured to create a magnetic field bias. Also, the conductive material can have electrically isolated segments that are utilized as electrical jumpers for connecting circuit elements. The invention also includes semiconductor constructions comprising the electrically conductive material between line constructions associated with one or both of the pitch region and the peripheral region.
申请公布号 US7883959(B2) 申请公布日期 2011.02.08
申请号 US20100855585 申请日期 2010.08.12
申请人 MICRON TECHNOLOGY, INC. 发明人 FISCHER MARK;MCDANIEL TERRENCE B.
分类号 H01L21/8234;H01L21/8244 主分类号 H01L21/8234
代理机构 代理人
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