发明名称 Chip and multi-chip semiconductor device using the chip, and method for manufacturing same
摘要 The chip for the multi-chip semiconductor device having the markings for alignment formed on the front surface and/or the back surface of the chip only by the processing from the front surface of the chip (photolithography, etch) and the method for manufacturing same are presented, without adding any dedicated process step to the formation process for the marking for alignment. In the chip for the multi-chip semiconductor device having two or more electroconductive through plug in one chip for the multi-chip semiconductor device, one or more electroconductive through plugs are employed for the marking for alignment, and the chip is configured to allow identification of the marking for alignment on the front surface and/or the back surface of the chip for the multi-chip semiconductor device. Then, an insulating film is provided on the front surface and/or the back surface of the electrically conducting through plug.
申请公布号 US7883985(B2) 申请公布日期 2011.02.08
申请号 US20060518274 申请日期 2006.09.11
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MATSUI SATOSHI
分类号 H01L21/76;H01L25/18;H01L21/60;H01L21/98;H01L23/02;H01L23/48;H01L23/498;H01L23/52;H01L23/544;H01L25/065;H01L25/07 主分类号 H01L21/76
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