发明名称 |
Non-volatile memory devices |
摘要 |
In one embodiment, a semiconductor memory device includes a substrate having first and second active regions. The first active region includes a first source and drain regions and the second active region includes a second source and drain regions. A first interlayer dielectric is located over the substrate. A first conductive structure extends through the first interlayer dielectric. A first bit line is on the first interlayer dielectric. A second interlayer dielectric is on the first interlayer dielectric. A contact hole extends through the second and first interlayer dielectrics. The device includes a second conductive structure within the contact hole and extending through the first and second interlayer dielectrics. A second bit line is on the second interlayer dielectric. A width of the contact hole at a bottom of the second interlayer dielectric is less than or substantially equal to a width at a top of the second interlayer dielectric.
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申请公布号 |
US7884425(B2) |
申请公布日期 |
2011.02.08 |
申请号 |
US20080257939 |
申请日期 |
2008.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEL JONG-SUN;CHOI JUNG-DAL;LEE CHOONG-HO;CHUNG JU-HYUCK;KANG HEE-SOO;CHOI DONG-UK |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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