| 摘要 |
Embodiments relate to a flash memory device and a method for manufacturing a flash memory device. According to embodiments, a method may include forming a gate on and/or over a semiconductor substrate on and/or over which a device isolation film may be formed, forming a first spacer including a first oxide pattern and a first nitride pattern on and/or over side walls of the gate, forming a source and drain area on and/or over the semiconductor substrate using the gate and spacer as masks, removing the first nitride pattern of the first spacer, and forming a second spacer including a second oxide film pattern and a second nitride film pattern on and/or over the side walls of the gate by performing an annealing process on and/or over the semiconductor substrate on and/or over which the first oxide film pattern is formed.
|
