发明名称 Impact sensor and method for manufacturing the impact sensor
摘要 An impact sensor comprises a silicon substrate; an insulating layer formed over the silicon substrate; a plurality of beams having flexibility that are formed of conductive silicon material; a fixing portion to fix a fixed end of each of the beams, the fixing portion being formed of conductive silicon material; a fixed end line at whose one end is formed the fixing portion, the fixed end line being formed of conductive silicon material on the insulating layer; and a free end line having a pressing portion that faces a free end of each of the beams via a space, the free end line being formed of conductive silicon material on the insulating layer. Respective beam widths, each measured in a direction orthogonal to a length direction joining the fixed end and the free end, of the plurality of beams are set different from each other, thus reducing the space occupied by the sensor.
申请公布号 US7884429(B2) 申请公布日期 2011.02.08
申请号 US20090458494 申请日期 2009.07.14
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 OZAWA NOBUO
分类号 H01L29/84 主分类号 H01L29/84
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