发明名称 |
Structure and method of forming a topside contact to a backside terminal of a semiconductor device |
摘要 |
A vertically conducting semiconductor device includes a semiconductor substrate having a topside surface and a backside surface. The semiconductor substrate serves as a terminal of the vertically conducting device for biasing the vertically conducting device during operation. An epitaxial layer extends over the topside surface of the semiconductor substrate but terminates prior to reaching an edge of the semiconductor substrate so as to form a recessed region along a periphery of the semiconductor substrate. An interconnect layer extends into the recessed region but terminates prior to reaching an edge of the semiconductor substrate. The interconnect layer electrically contacts the topside surface of the semiconductor substrate in the recessed region to thereby provide a topside contact to the semiconductor substrate.
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申请公布号 |
US7884390(B2) |
申请公布日期 |
2011.02.08 |
申请号 |
US20080168348 |
申请日期 |
2008.07.07 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
ANDREWS JOHN T.;YILMAZ HAMZA;MARCHANT BRUCE;HO IHSIU |
分类号 |
H01L29/732 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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