发明名称 |
Pulsed high-voltage silicon quantum dot fluorescent lamp |
摘要 |
In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.
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申请公布号 |
US7883387(B2) |
申请公布日期 |
2011.02.08 |
申请号 |
US20070898344 |
申请日期 |
2007.09.11 |
申请人 |
ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGYRESEARCH |
发明人 |
YANG TSUN-NENG;LAN SHAN-MING;CHIANG CHIN-CHEN;MA WEI-YANG;KU CHIEN-TE |
分类号 |
H01J9/00;B05D5/06;B05D5/12 |
主分类号 |
H01J9/00 |
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